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Si4483EDY
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
-30
FEATURES
ID (A)
-14 -11
rDS(on) (W)
0.0085 @ VGS = -10 V 0.014 @ VGS = -4.5 V
D TrenchFETr Power MOSFET D ESD Protection: 3000 V
APPLICATIONS
D Notebook PC - Load Switch - Adapter Switch
S
SO-8
S S S G 1 2 3 4 Top View Ordering Information: Si4483EDY-T1--E3 8 7 6 5 D D D D G
7100 W
P-Channel D
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C
Symbol
VDS VGS ID IDM IS PD TJ, Tstg
10 secs
Steady State
-30 "25
Unit
V
-14 -11 -50 -2.7 3.0 1.9 -55 to 150
-10 -8 A
-1.36 1.5 0.95 W _C
THERMAL RESISTANCE RATINGS
Parameter
Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 72862 S-42139--Rev. B, 15-Nov-04 www.vishay.com t v 10 sec Steady State Steady State
Symbol
RthJA RthJF
Typical
33 70 16
Maximum
42 85 21
Unit
_C/W C/W
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Si4483EDY
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Gate Threshold Voltage Gate-Body Gate Body Leakage VGS(th) IGSS VDS = VGS, ID = -250 mA VDS = 0 V, VGS = "4.5 V VDS = 0 V, VGS = "25 V VDS = -30 V, VGS = 0 V VDS = -30 V, VGS = 0 V, TJ = 70_C VDS = -5 V, VGS = -10 V VGS = -10 V, ID = -14 A VGS = -4.5 V, ID = -11 A VDS = -15 V, ID = -14 A IS = -2.7 A, VGS = 0 V -30 0.007 0.0115 60 -0.74 -1.1 0.0085 0.014 -1.0 3.0 "1 "10 -1 -10 V mA mA mA A W S V
Symbol
Test Condition
Min
Typ
Max
Unit
Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Drain Source On State Resistancea Forward Transconductancea Diode Forward Voltagea
IDSS ID(on) rDS( ) DS(on) gfs VSD
Dynamicb
Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(on) tr td(off) tf VDD = -15 V, RL = 15 W ID ^ -1 A, VGEN = -10 V, Rg = 6 W 10 20 42 50 15 30 65 80 ms
Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Gate-Current vs. Gate-Source Voltage
8 100 10 IGSS - Gate Current (mA) 6 IGSS - Gate Current (mA) 1 0.1
Gate Current vs. Gate-Source Voltage
TJ = 150_C TJ = 25_C
4
0.01 0.001
2
0 0 5 10 15 20 25 30
0.0001 0 6 12 18 24 30
VGS - Gate-to-Source Voltage (V) www.vishay.com
VGS - Gate-to-Source Voltage (V) Document Number: 72862 S-42139--Rev. B, 15-Nov-04
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Si4483EDY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
50 VGS = 10 thru 4 V 40 I D - Drain Current (A) 3V I D - Drain Current (A) 40 50
Transfer Characteristics
30
30
20
20 TC = 125_C 10 25_C -55_C 2.0 2.5 3.0 3.5
10
0 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V)
0 0.0
0.5
1.0
1.5
VGS - Gate-to-Source Voltage (V)
0.020
On-Resistance vs. Drain Current
1.6
On-Resistance vs. Junction Temperature
r DS(on) - On-Resistance ( W )
0.016 rDS(on) - On-Resiistance (Normalized) 40 50
1.4
0.012
VGS = 4.5 V
1.2
0.008
VGS = 10 V
1.0
0.004
0.8
0.000 0 10 20 30
0.6 -50
-25
0
25
50
75
100
125
150
ID - Drain Current (A)
TJ - Junction Temperature (_C)
Source-Drain Diode Forward Voltage
50 0.05
On-Resistance vs. Gate-to-Source Voltage
10
r DS(on) - On-Resistance ( W )
I S - Source Current (A)
TJ = 150_C
0.04
0.03
ID = 14 A
1 TJ = 25_C
0.02
0.01
0.1 0.0
0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) www.vishay.com
Document Number: 72862 S-42139--Rev. B, 15-Nov-04
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Si4483EDY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.8 0.6 V GS(th) Variance (V) ID = 250 mA 0.4 0.2 0.0 -0.2 -0.4 -50 10 Power (W) 30 50
Single Pulse Power
40
20
-25
0
25
50
75
100
125
150
0 0.01
0.1
1 Time (sec)
10
100
600
TJ - Temperature (_C)
100 *Limited by rDS(on) 10 I D - Drain Current (A)
Safe Operating Area, Junction-to-Case
1 ms 10 ms 1 100 ms 1s 0.1 TC = 25_C Single Pulse 10 s dc
0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) *VGS u minimum VGS at which rDS(on) is specified
2 1
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient Thermal Impedance
Duty Cycle = 0.5
0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 1 Square Wave Pulse Duration (sec) 10-1
Notes: PDM t1
t2 1. Duty Cycle, D =
2. Per Unit Base = RthJA = 70_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted
t1 t2
10
100
600
www.vishay.com
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Document Number: 72862 S-42139--Rev. B, 15-Nov-04
Si4483EDY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
2 1 Normalized Effective Transient Thermal Impedance
Duty Cycle = 0.5
0.2 0.1 0.1 0.05 0.02
Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72862. Document Number: 72862 S-42139--Rev. B, 15-Nov-04 www.vishay.com
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